The BTS 949 is a N-channel vertical power MOSFET from Texas Instruments. It has a maximum on-state resistance of 18 mΩ, a maximum current of 9.5 A, and a maximum clamping energy of 6000 mJ. The device features logic level input, ESD protection, thermal shutdown protection, overload protection, short circuit protection, overvoltage protection, current limitation, maximum current adjustable with external resistor, current sense, status feedback with external input resistor, and analog driving possible.
The HITFET® BTS 949 is a smart low‑side power switch designed for 12 V and 24 V DC applications. It replaces electromechanical relays and can drive resistive, inductive, and capacitive loads. The device integrates multiple protection functions, including over‑voltage, overload, short‑circuit, ESD, and thermal shutdown, making it suitable for robust industrial designs.
Key electrical ratings include a 60 V drain‑source voltage, 19 A nominal load current, 240 W power dissipation, and an operating temperature range of –40 °C to +150 °C. The datasheet also lists detailed on‑state resistance values, input threshold voltages, and dynamic characteristics such as turn‑on/off times and slew rates.
| Drain‑source voltage (Vds) | 60 V |
|---|---|
| On‑state resistance (typ.) | 18 mΩ |
| Nominal load current | 19 A |
| Unclamped single pulse inductive energy | 6000 mJ |
| Thermal shutdown current limit | 9.5 A |
| Power dissipation | 240 W |
| Operating temperature range | -40 °C to +150 °C |
| Input threshold voltage | 1.3 V to 2.2 V |
The maximum drain‑source voltage is 60 V.
The device can handle a nominal load current of 19 A.
The device can dissipate up to 240 W of power.