This document describes a semiconductor product with a 4-bit organization and a capacity of 262144 words. It has fast access and cycle times, low power dissipation, and is suitable for DRAM applications.
The Siemens HYB 514256B/BJ/BL/BJL is a new generation dynamic RAM organized as 262,144 words by 4-bit. It utilizes CMOS silicon gate process technology to provide wide operating margins and high system bit densities. The device supports single +5 V power supply operation and features fast access times ranging from 50 ns to 70 ns depending on the version.
| Organization | 262 144 words by 4-bit |
|---|---|
| Supply Voltage | +5 V (+ 10%) |
| Access Time (-50 version) | 50 ns |
| Cycle Time (-50 version) | 95 ns |
Yes, the HYB 514256BL/BJL versions are specially selected for battery backup applications.
The maximum standby power dissipation is 5.5 mW for standard versions and 1.1 mW for L-versions.