User Manual
This document introduces a semiconductor product, which is a 4M x 32-bit or 8M x 16-bit dynamic RAM module. The module features fast access and cycle time, fast page mode capability, low power dissipation, CAS-before-RAS refresh, etc.
Datasheet
This document describes the features and characteristics of the Semiconductor Group 1 2M × 32-Bit Dynamic RAM Module, including fast access and cycle time, hyper page mode-EDO capability, low power dissipation, refresh methods, and TTL compatibility.
User Manual
The 4M x 36-Bit EDO - DRAM Module HYM364025S/GS-50/-60 is a SIMM module with 4 194 304 words x 36-Bit organization for PC main memory applications. It has fast access and cycle time, high performance Hyper Page Mode (EDO) function, single +5 V (± 10 %) supply and low power dissipation. In addition, it has CAS-before-RAS refresh, RAS-only-refresh implicit refresh, decoupling capacitors mounted on substrate, all inputs, outputs and clocks fully compatible TTL, 72 pin single in-line memory module (L-SIM-72-12) with 22.9 mm (900 mil) height, uses eight 4Mx4-EDO-DRAMs and four 4Mx1-EDO-DRAMs in SOJ packages, 2048 refresh cycles / 32 ms and optimized for use in byte-write parity applications.
