SIEMENS HYB 514256B/BJ-50/-60/-70 256 K × 4-Bit Dynamic RAM HYB 514256BL/BJL-50/-60/-70 Low Power 256 K × 4-Bit Dynamic RAM

This document describes the semiconductor components, including their 4-bit organization, fast access and cycle time, fast page mode cycle time, and low power dissipation.

Brand: Siemens
Category: Memory
Document type: Datasheet
Language: English
Pages: 22
File format: PDF
File size: 217 KB
Published: 05 June, 2012
Updated: 29 September, 2023
Models: BJ-50, 514256BL, BJL-50
MD5 checksum: 7A5E4B689CD49293BD10D6EF7955C62A
PDF: SIEMENS HYB 514256B/BJ-50/-60/-70 256 K × 4-Bit Dynamic RAM HYB 514256BL/BJL-50/-60/-70 Low Power 256 K × 4-Bit Dynamic RAM PDF

About this manual

This document is a technical datasheet for the Siemens HYB 514256B/BJ/BL/BJL family of Low Power Dynamic RAMs. The devices are organized as 262,144 words by 4-bit and utilize CMOS silicon gate process technology to provide wide operating margins.

What's inside

Ordering Information
Pin Definitions and Functions
Absolute Maximum Ratings
DC Characteristics
AC Characteristics

Specifications

Organization	262 144 words by 4-bit
Supply Voltage	+5 V (+ 10%)
Access Time (-50 version)	50 ns
Cycle Time (-60 version)	110 ns

Frequently asked questions

What is the refresh cycle time for this DRAM?

The device supports a refresh period of 8 ms or 64 ms depending on the configuration.

Is this memory suitable for battery backup applications?

Yes, the HYB 514256BL/BJL variants are specially selected for battery backup applications.

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