RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. It features high power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz.
The RDOOHVS1 is a silicon RF power MOSFET designed for VHF/UHF amplifier applications. It offers a drain‑to‑source voltage of 30 V, typical output power of 0.5 W at 12.5 V supply, and operates around 175 MHz.
The datasheet includes absolute maximum ratings, electrical characteristics, typical performance curves, S‑parameter data, and safety precautions for reliable integration into RF circuits.
| Drain‑to‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑to‑source voltage (VGS) | ±10 V |
| Channel dissipation (Pch) | 3.1 W |
| Drain current (ID) | 200 mA |
| Storage temperature (Tstg) | -40 °C to +125 °C |
| Thermal resistance (Rth j‑c) | 40 °C/W |
| Typical output power (Pout) | 0.5 W |
The maximum drain‑to‑source voltage is 30 V.
The device typically delivers 0.5 W of output power at VDD = 12.5 V.
Yes, the RDOOHVS1 is listed as RoHS compliant.