This document describes the RF performance of RD00HVS1 and RD02MUS1B 2-stage amplifiers at a frequency range of 400-470MHz and Vdd=7.2V. The evaluation conditions include frequency characteristics, Pout vs. Pin characteristics, and small signal S parameters. The document provides typical data for frequency characteristics, Pout vs. Pin characteristics, and small signal S parameters.
The document presents measured RF performance data for the Mitsubishi Electric RDOOHVS1 and RDO2MUS1B two‑stage power amplifiers. Test conditions include a supply voltage of 7.2 V, input power of 5 mW, and bias currents of Idq1 = 50 mA and Idq2 = 200 mA.
Results are shown for frequency characteristics, output‑power versus input‑power curves, and small‑signal S‑parameters over a wide frequency range. An equivalent circuit and a complete parts list with component values are also provided.
| Frequency range | 400‑470 MHz |
|---|---|
| Supply voltage | 7.2 V |
| Input power (Pin) | 5 mW |
| Bias current Idq1 | 50 mA |
| Bias current Idq2 | 200 mA |
| Small‑signal S‑parameter frequency range | 50 MHz – 1.5 GHz |
| Capacitor C1 value | 15 pF (Murata) |
The amplifiers were evaluated from 400 MHz to 470 MHz.
A supply voltage of 7.2 V was applied with Idq1 set to 50 mA and Idq2 set to 200 mA.