Mitsubishi Electric PM100CSE120 Intelligent Power Module Datasheet
This document describes the features and characteristics of the MITSUBISHI PM100CSE120 FLAT-BASE TYPE INSULATED PACKAGE, released in July 2005. The product adopts a new 4th generation planar IGBT chip, which improves performance through a 1µm fine rule process. It also uses a new diode designed to have soft reverse recovery characteristics. The product is suitable for 3-phase 100A, 1200V current-sense IGBT for 15kHz switching. It features monolithic gate drive and protection logic, as well as detection, protection, and status indication circuits for over-current, short-circuit, over-temperature, and under-voltage. The product is suitable for acoustic noise-less 18.5/22kW class inverter applications.
This document is a datasheet for the Mitsubishi Electric PM100CSE120, a flat-base type insulated intelligent power module (IPM). It features a new 4th generation planar IGBT chip and a diode designed for soft reverse recovery characteristics, suitable for 15kHz switching applications in inverters and servo drives.
The datasheet provides comprehensive electrical and mechanical ratings, including maximum collector-emitter voltage of 1200V and collector current of 100A. It details internal functions, thermal resistances, electrical characteristics for both inverter and control parts, recommended operating conditions, and precautions for testing and stable operation.
What's inside
Features
Application
Maximum Ratings
Electrical Characteristics
Thermal Resistances
Recommended Conditions
Precautions for Testing
Notes for Stable Operation
Specifications
Junction Temperature
-20 ~ +150 °C
Weight
920 g
Frequently asked questions
What is the switching frequency class for this module?
It is designed for 15kHz switching applications.
What are the recommended mounting torques?
The main terminal screw requires 2.5 to 3.5 N-m, and the mounting part screw requires 2.5 to 3.5 N-m.
