MGF0915A is an N-channel Schottky Gate GaAs FET, designed for use in UHF band amplifiers. Its features are high output power, high gain, and high power added efficiency.
The MGF0915A is a high‑power GaAs FET designed for use in UHF‑band (L & S band) power amplifiers. It features a Schottky gate, hermetic packaging, and is supplied as a non‑matched SMD device.
The datasheet lists key performance figures such as typical output power of 36.5 dBm at 1.9 GHz, gain of 14.5 dB, and power‑added efficiency of 50 %. It also includes absolute maximum ratings, recommended bias conditions, and S‑parameter data, together with safety and legal notices from Mitsubishi Electric Corporation.