This is an application note about the RF characteristics of MGF0915A. It includes the test conditions, test results and equivalent circuit of the product.
The document, dated May 2005, presents measured RF performance of the MGF0915A semiconductor device in the 2.11‑2.17 GHz frequency range. It includes sample history, test conditions, and measured parameters such as IDQ, Vd, and ACLR.
Pages 2‑3 contain the detailed RF test results, while page 4 shows the equivalent circuit and the test fixture component values used for the measurements.
| Drain voltage (Vd) | 10 V |
|---|---|
| Test temperature (Tc) | 25 °C |
| Frequency range | 2.11‑2.17 GHz |
| Test fixture capacitance C1‑C4 | 20 pF each |
| Test fixture inductance L1‑L2 | 12 nH each |
The device is characterized for the 2.11‑2.17 GHz band.
Measurements were taken at a drain voltage of 10 V, quiescent current of 0.8 A, and a temperature of 25 °C.
The equivalent circuit is shown on page 4 of the document.
The note was dated May 2005.