This document shows the RF characteristics data of MGF0915A, including evaluation results of parameters such as CW, ACLR, and IMD.
This application note from Mitsubishi Electric presents RF characteristic measurements for the semiconductor device MGF0915A. It summarizes test results and the equivalent circuit for the 2.5‑2.7 GHz frequency band.
The document includes detailed RF test data, measurement conditions (Vd=10 V, IDQ=0.8 A, 25 °C), component values for the equivalent circuit, and specifications of the test fixture such as board material and component values.
| Frequency band | 2.5‑2.7 GHz |
|---|---|
| Lot number | 46G |
| Supply voltage (Vd) | 10 V |
| Quiescent current (IDQ) | 0.8 A |
| Test temperature (Tc) | 25 °C |
| Board material | FR4, thickness 0.8 mm |
| Capacitor values | C1.C2 C3.C4=20nF, C5.C7,C8=1000pF |
| Inductor values | L1.L2=12nH |
The MGF0915A data are provided for the 2.5‑2.7 GHz band.
Measurements were taken with a supply voltage of 10 V, a quiescent current of 0.8 A, and at a temperature of 25 °C.
The evaluated sample has lot number 46G.
The test fixture uses an FR4 board with a thickness of 0.8 mm.