This document describes the Toshiba 2SK2614 N‑channel MOSFET, intended for high‑speed, high‑current switching applications such as chopper regulators, DC‑DC converters, and motor drives. It includes key electrical parameters, thermal data, and recommended handling precautions for designers.
The sheet lists maximum ratings, typical performance values, and diode characteristics, along with storage temperature limits and marking information. It also contains safety notices regarding electrostatic sensitivity and reliability considerations.
| Drain‑Source Voltage (VDS) | 50 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Storage Temperature Range | -55 °C to 150 °C |
The device can tolerate up to 50 V between drain and source.
It is an electrostatic‑sensitive device; handle with caution and follow ESD precautions.