This document describes the features and characteristics of the 2SK2614 field effect transistor, which is suitable for chopper regulators, DC/DC converters, and motor drive applications. Its features include low leakage current, low drain-source ON-resistance, high forward transfer admittance, and low threshold voltage.
The 2SK2614 is a silicon N‑channel MOSFET intended for use in chopper regulators, DC/DC converters, and motor drive applications. The document lists its absolute maximum ratings, electrical characteristics, and thermal data, along with handling precautions for reliable operation.
Key specifications include a 50 V drain‑source voltage, low on‑resistance of 0.032 Ω (typ.), and a gate‑threshold range of 0.8‑2.0 V. The datasheet also outlines recommended operating conditions, thermal resistance values, and safety restrictions for unintended usage.
| Drain‑source voltage (V_DSS) | 50 V |
|---|---|
| On‑resistance (R_DS(on)) | 0.032 Ω (typ.) |
| Gate threshold voltage (V_GS(th)) | 0.8 – 2.0 V |
| Thermal resistance, channel‑to‑case (Rθc‑c) | 3.125 °C/W |
| Weight | 0.36 g (typ.) |
The maximum drain‑source voltage is 50 V.
The typical on‑resistance is 0.032 Ω.
The gate‑threshold voltage ranges from 0.8 V to 2.0 V.