2SK2614 is a field effect transistor suitable for chopper regulators, DC/DC converters, and motor drive applications. It features low drain-source ON-resistance, high forward transfer admittance, and low leakage current.
The 2SK2614 is a silicon N‑channel MOSFET designed for chopper regulators, DC/DC converters, and motor drive applications. It offers low on‑resistance and high current capability, making it suitable for a range of general electronics uses.
The document lists absolute maximum ratings, detailed electrical and thermal characteristics, marking information, and restrictions on product use, helping designers ensure reliable operation within specified limits.
| Drain‑source voltage (VDS) | 50 V |
|---|---|
| On‑resistance (RDS(on)) | 0.032 Ω (typ.) |
| Gate threshold voltage (Vth) | 0.8 – 2.0 V |
| Input capacitance (Ciss) | 900 pF |
| Output capacitance (Coss) | 370 pF |
| Thermal resistance, channel‑to‑case (Rth ch‑c) | 3.125 °C/W |
| Weight | 0.36 g (typ.) |
The maximum drain‑source voltage is 50 V.
The typical on‑resistance (RDS(on)) is 0.032 Ω.