The 2SA1015L is a PNP silicon epitaxial transistor designed for low‑noise audio frequency and high‑voltage applications. It offers high linearity and can operate with collector‑base voltages up to 50 V.
The sheet lists maximum ratings such as 150 mA collector current, 400 mW power dissipation, and a junction temperature of 125 °C, together with detailed electrical parameters like noise figure (0.2 dB) and transition frequency (80 MHz).
| Collector‑Base Voltage (Vcbo) | -50 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | -50 V |
| Emitter‑Base Voltage (Vebo) | -5 V |
| Collector Current (Ic) | -150 mA |
| Base Current (Ib) | -50 mA |
| Power Dissipation (Pd) | 400 mW |
| Junction Temperature (Tj) | 125 °C |
| Noise Figure (NF) | 0.2 dB (typ) |
The maximum collector current is 150 mA.
It is rated for 50 V collector‑base, 50 V collector‑emitter, and 5 V emitter‑base voltages.