Key facts
- Brand
- Motorola
- Model
- TIP125
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-08
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DatasheetMOTOROLA TIP120 TIP121 TIP122 TIP122 TIP125 TIP126 TIP127 handbook
MOTOROLA TIP120 TIP121 TIP122 TIP122 TIP125 TIP126 TIP127 handbook
Datasheet
The Motorola Bipolar Power Transistor device data describes the features and characteristics of the transistor, which is designed for general-purpose amplifier and low-speed switching applications.
Read onlineMotorola TIP125 specifications
| Collector‑Emitter Voltage (VCEO) Max | 60 V (TIP120), 80 V (TIP121/TIP125), 100 V (TIP122/TIP126/TIP127) |
|---|---|
| Typical DC Current Gain (hFE) | ≈ 2500 @ Ic = 4 A |
| Total Power Dissipation | 65 W (max) |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 1.92 °C/W |
| Package Type | TO‑220AB |
Source: Motorola TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Datasheet
All Motorola TIP125 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑emitter voltage for TIP120?
The TIP120 is rated for a maximum collector‑emitter voltage of 60 V.
From: Motorola TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Datasheet
What is the typical DC current gain of these transistors?
The typical DC current gain (hFE) is about 2500 at a collector current of 4 A.
From: Motorola TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Datasheet