TIP120, TIP121, TIP122, and TIP125 are NPN general-purpose power transistors designed for general-purpose amplifier and low-speed switching applications. They have high DC current gain, low collector-emitter saturation voltage, and monolithic construction with built-in base-emitter shunt resistors.
This Motorola datasheet provides detailed electrical, thermal, and mechanical specifications for the TIP120, TIP121, TIP122, TIP125, TIP126, and TIP127 complementary silicon power transistors. It includes maximum ratings, characteristic curves, and package dimensions for designers and engineers.
The document also contains safety and warranty notices, as well as contact information for Motorola literature distribution worldwide.
| Collector‑Emitter Voltage (VCEO) Max | 60 V (TIP120), 80 V (TIP121/TIP125), 100 V (TIP122/TIP126/TIP127) |
|---|---|
| Typical DC Current Gain (hFE) | ≈ 2500 @ Ic = 4 A |
| Total Power Dissipation | 65 W (max) |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 1.92 °C/W |
| Package Type | TO‑220AB |
The TIP120 is rated for a maximum collector‑emitter voltage of 60 V.
The typical DC current gain (hFE) is about 2500 at a collector current of 4 A.
The TIP125 can dissipate up to 65 W at a case temperature of 25 °C.
They are housed in a TO‑220AB compact package.