Key facts
- Brand
- Motorola
- Model
- MMSF5N03HD
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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Motorola MMSF5N03HD Power MOSFET Designer's Data Sheet
This document is a Designer's Data Sheet for the Motorola MMSF5N03HD, a medium power surface mount product in the MiniMOS™ series of TMOS Single N-Channel Field Effect Transistors. These devices utilize Motorola's High Cell Density HDTMOS process and are designed for low voltage, high speed switching applications where power efficiency is important.
Read onlineMotorola MMSF5N03HD specifications
| Drain-to-Source Voltage | 30 Vdc |
|---|---|
| Continuous Drain Current @ Ta = 25°C | 6.5 Adc |
| Total Power Dissipation @ Ta = 25°C | 25 Watts |
| Operating and Storage Temperature Range | -55 to 150 °C |
| Single Pulse Drain-to-Source Avalanche Energy | 450 mJ |
| Thermal Resistance Junction to Ambient | 50 oc |
Source: Motorola MMSF5N03HD Power MOSFET Designer's Data Sheet
All Motorola MMSF5N03HD documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical static drain-source on-resistance?
The typical static drain-source on-resistance is 0.040 Ohms when Vgs = 10 Vdc and Id = 5.0 Adc.
From: Motorola MMSF5N03HD Power MOSFET Designer's Data Sheet
What is the maximum gate threshold voltage?
The maximum gate threshold voltage is 3.0 Vdc when Vds = Vgs and Id = 250 uAdc.
From: Motorola MMSF5N03HD Power MOSFET Designer's Data Sheet
Is the gate drive logic level?
Yes, the device features true logic level performance and can be driven by logic ICs.
What is the maximum continuous drain current at 25°C?
The device supports a continuous drain current of 6.5 Amperes at 25°C.