Key facts
- Brand
- Motorola
- Model
- MMSF3P03HD
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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Motorola MMSF3P03HD P-Channel MOSFET Designer's Data Sheet
This document is a Designer's Data Sheet for the Motorola MMSF3P03HD, a single TMOS power field effect transistor. The device belongs to the MiniMOS series of advanced power MOSFETs utilizing Motorola's High Cell Density HDTMOS process. It features ultra-low on-resistance and true logic-level performance, designed for low-voltage, high-speed switching applications such as DC-DC converters and portable electronics.
Read onlineMotorola MMSF3P03HD specifications
| Drain-to-Source Voltage | 30 Vdc |
|---|---|
| Operating Temperature Range | -55 to 150 °C |
| Total Power Dissipation (25°C) | 25 Watts |
Source: Motorola MMSF3P03HD P-Channel MOSFET Designer's Data Sheet
All Motorola MMSF3P03HD documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical application for this device?
Typical applications are dc-dc converters, and power management in D portable and battery powered products such as computers, printers, cellular and cordless phones.
From: Motorola MMSF3P03HD P-Channel MOSFET Designer's Data Sheet
What is the package type?
The device uses a miniature SO-8 Surface Mount Package.
From: Motorola MMSF3P03HD P-Channel MOSFET Designer's Data Sheet
What is the typical on-resistance of the MMSF3P03HD?
The typical on-resistance is 0.1 Ohm.
What is the maximum drain current at 25°C?
The maximum continuous drain current at 25°C is 4.6 Amperes.