Key facts
- Brand
- Motorola
- Model
- MMSF5P02HD
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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Motorola MMSF5P02HD TMOS Single P-Channel Field Effect Transistor Datasheet
This document is a Designer's Data Sheet for the Motorola MMSF5P02HD, a TMOS Single P-Channel Field Effect Transistor (FET) from the MiniMOS series. These devices utilize Motorola's High Cell Density HDTMOS process to provide ultra-low on-resistance and true logic-level performance in a miniature SO-8 surface mount package.
The MMSF5P02HD is designed for low voltage, high speed switching applications where power efficiency is critical. Typical applications include DC-DC converters, power management in portable products like computers and phones, and motor controls. The datasheet provides maximum ratings, electrical characteristics, typical performance curves, and switching behavior analysis.
Motorola MMSF5P02HD specifications
| Drain-to-Source Voltage (Vpss) | 20 V |
|---|---|
| Continuous Drain Current (ID) | 8.7 A |
| On-Resistance (RpS(on)) | 0.03 Ohm |
| Package Type | CASE 751-05, Style 13 (SO-8) |
| Operating Temperature Range | -55 to 150 °C |
Source: Motorola MMSF5P02HD TMOS Single P-Channel Field Effect Transistor Datasheet
All Motorola MMSF5P02HD documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical application for this device?
Typical applications are dc-de converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
From: Motorola MMSF5P02HD TMOS Single P-Channel Field Effect Transistor Datasheet
Can this device be driven by logic ICs?
Yes, it features Logic Level Gate Drive — Can Be Driven by Logic ICs.
From: Motorola MMSF5P02HD TMOS Single P-Channel Field Effect Transistor Datasheet
What is the typical on-resistance of the S5P02H?
The typical static drain-to-source on-resistance (RDS(on)) is 23 mΩ.
Is this device logic level driven?
Yes, the device features true logic-level performance and can be driven by logic ICs.