Key facts
- Brand
- Motorola
- Model
- MPS4250
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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Motorola MPS4250 PNP Silicon Transistor Datasheet
This document is a technical datasheet for the Motorola MPS4250, a PNP silicon transistor. It provides comprehensive data on maximum ratings, including collector-emitter voltage of -40 Vdc and total device dissipation up to 625 mW depending on the package style (TO-92 or TO-226AA).
The datasheet also lists electrical characteristics such as DC current gain ranging from 800 to 250, small-signal parameters like output capacitance of 6.0 pF, and thermal resistance values. Package dimensions for the TO-92 (TO-226AA) style are included with specific lead spacing and body size measurements.
Motorola MPS4250 specifications
| Collector-Emitter Voltage (VCEO) | -40 Vdc |
|---|---|
| Total Device Dissipation @ Ta = 25°C (TO-92) | 625 mW |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Ambient (Rea) | 200 °C/W |
All Motorola MPS4250 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous collector current for this transistor?
The maximum continuous collector current is 10 mA.
What are the operating and storage junction temperature limits?
The device operates and stores between -55°C and +150°C.
What is the maximum collector current?
The maximum continuous collector current is 500 mA.
What is the maximum total device dissipation at an ambient temperature of 25°C?
The maximum total device dissipation is 625 mW at an ambient temperature of 25°C.