Key facts
- Brand
- Toshiba
- Model
- TLP197G
- Industry
- Industrial
- Documents
- 4
- Languages
- EN
- Last added
- 2012-06-01
Start here
Toshiba TLP197G Photocoupler Datasheet
The TLP197G is a miniature GaAs infrared emitting diode optically coupled to a photo‑MOS FET in a 6‑lead, 2.1 mm high package. It is intended for surface‑mount assembly and can replace mechanical relays in fax machines, modems, and similar equipment.
The document lists maximum ratings, individual and coupled electrical characteristics, isolation and switching parameters, as well as recommended operating conditions and product‑use restrictions.
Toshiba TLP197G specifications
| Peak off‑state voltage | 350 V (min) |
|---|---|
| On‑state current (A connection) | 120 mA (max) |
| On‑state resistance | 35 Ω (max) |
| Isolation voltage | 1500 Vrms (min) |
| Forward current IF | 50 mA |
| Reverse voltage VR | 5 V |
| Junction temperature Tj | 125 °C |
| Operating temperature range Topr | -40 °C to 85 °C |
All Toshiba TLP197G documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the peak off‑state voltage of the TLP197G?
The peak off‑state voltage is 350 V (minimum).
What are the recommended operating temperature limits?
The device is rated for an operating temperature range of –40 °C to 85 °C.
What is the maximum off‑state voltage rating?
The device is rated for a peak off‑state voltage of 350 V (minimum).
What is the recommended supply voltage for VOFF?
The recommended VOFF is typically 280 V.
What is the maximum off‑state voltage for the TLP197G?
The device is rated for a peak off‑state voltage of 350 V (minimum).
What is the recommended operating temperature range?
The recommended operating temperature is from –20 °C to 65 °C.