This datasheet provides TOSHIBA TLP197G features and parameters.
The TLP197G is a miniature, surface‑mountable GaAs infrared emitting diode optocoupler with a photo‑MOS FET, intended for use in fax machines, modems and other electronic equipment. The document lists absolute maximum ratings, recommended operating conditions, pin configuration, and detailed electrical characteristics.
Key information includes voltage and current limits, isolation specifications, switching times, and environmental ratings, along with safety and compliance notes for designers.
| Peak off‑state voltage (VOFF) | 350 V (min) |
|---|---|
| On‑state current (A connection) | 120 mA (max) |
| On‑state resistance (RON) | 35 Ω (max) |
| Isolation voltage | 1500 Vrms (min) |
| Forward voltage (VF) at IF=10 mA | 1.15 V (typ) |
| Supply voltage (VOFF) recommended | 280 V |
| Weight | 0.13 g |
The device is rated for a peak off‑state voltage of 350 V (minimum).
The recommended operating temperature is from –20 °C to 65 °C.
Typical forward voltage is about 1.15 V at a forward current of 10 mA.