Siemens HYM364025S/GS-50/-60 4M x 36-Bit EDO DRAM Module Datasheet

The 4M x 36-Bit EDO - DRAM Module HYM364025S/GS-50/-60 is a SIMM module with 4 194 304 words x 36-Bit organization for PC main memory applications. It has fast access and cycle time, high performance Hyper Page Mode (EDO) function, single +5 V (± 10 %) supply and low power dissipation. In addition, it has CAS-before-RAS refresh, RAS-only-refresh implicit refresh, decoupling capacitors mounted on substrate, all inputs, outputs and clocks fully compatible TTL, 72 pin single in-line memory module (L-SIM-72-12) with 22.9 mm (900 mil) height, uses eight 4Mx4-EDO-DRAMs and four 4Mx1-EDO-DRAMs in SOJ packages, 2048 refresh cycles / 32 ms and optimized for use in byte-write parity applications.


Siemens HYM364025S/GS-50/-60 4M x 36-Bit EDO DRAM Module Datasheet - cover page
Brand
Siemens
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
56 KB
Published
04 May, 2012
Updated
30 September, 2023
Model
GS-50
MD5 checksum
BF790AF2D00F88BD04484690219D43EA

About this manual

The Siemens HYM364025S/GS-50/-60 is a 4 M × 36‑bit (16 MByte) EDO DRAM module offered in 50 ns and 60 ns access‑time versions. It uses eight 4 M × 4 EDO‑DRAMs and four 4 M × 1 EDO‑DRAMs mounted on a 72‑pin SIMM (L‑SIM‑72‑12) package.

The datasheet provides electrical characteristics, timing parameters, power consumption, and package dimensions, along with ordering information for both the standard (S) and gold‑plated (GS) versions.

What's inside

  • Features
  • Ordering Information
  • Pin Configuration
  • Absolute Maximum Ratings
  • DC Characteristics
  • AC Characteristics
  • Package Outline

Specifications

Capacity4 M × 36‑bit (16 MByte)
Access time50 ns (‑50 version) / 60 ns (‑60 version)
Cycle time84 ns (‑50 version) / 104 ns (‑60 version)
Active power dissipationmax 6820 mW (‑50) / 6160 mW (‑60)
Standby powerCMOS 66 mW, TTL 132 mW

Frequently asked questions

What package type does the module use?

It is a 72‑pin Single In‑Line Memory Module (L‑SIM‑72‑12).

What is the operating temperature range?

The module operates from 0 °C to +70 °C.

How many DRAM chips are on the module?

The module uses eight 4 M × 4 EDO‑DRAMs and four 4 M × 1 EDO‑DRAMs.

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