Key facts
- Brand
- ROHM
- Model
- EMF6
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-11
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ROHM EMF6 Transistor Datasheet
This document is a datasheet for the ROHM EMF6, a power management circuit featuring two transistors housed independently in a single EMT6 package. The device includes a 2SA2018 NPN transistor and a 2SK3019 MOSFET, designed to reduce mounting costs and area by half compared to separate packages.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical characteristic curves for both transistors. Key specifications include a collector-emitter voltage of 12V for the NPN transistor and a drain-source voltage of 30V for the MOSFET, with a total power dissipation limit of 150mW.
ROHM EMF6 specifications
| Package Type | EMT6 |
|---|---|
| Marking Code | F6 |
| Basic ordering unit | 8000 pieces |
| Collector-emitter voltage (2SA2018) | 12 V |
| Collector current (2SA2018) | 500 mA |
| Power dissipation (Total) | 150 mW |
| Drain-source voltage (2SK3019) | 30 V |
| Drain current (Continuous) (2SK3019) | 100 mA |
| Junction temperature | 150 °C |
Source: ROHM EMF6 Transistor Datasheet
All ROHM EMF6 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum total power dissipation for the EMF6 transistor?
The maximum total power dissipation is 150 mW.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage is 12 V.
What package does the EMF6 use?
The EMF6 transistors are housed independently in an EMT6 package.