Key facts
- Brand
- ROHM
- Model
- 2SD2657
- Category
- Other Electronics
- Documents
- 2
- Languages
- ZH · EN
- Last added
- 2012-06-01
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ROHM 2SD2657 Transistor Datasheet
This datasheet describes the 2SD2657 low‑frequency amplifier transistor, covering its features, external dimensions, absolute maximum ratings, packaging details, and extensive electrical characteristics with characteristic curves. It includes typical performance graphs such as DC current gain versus collector current and saturation voltage curves.
The document also contains usage notes, export control information, and legal disclaimer statements from ROHM CO.,LTD., advising consultation for high‑reliability applications such as medical or aerospace equipment. This manual is written in Chinese.
ROHM 2SD2657 specifications
| Collector‑Emitter saturation voltage (VCE(sat)) max | 0.35 V |
|---|---|
| Collector‑Base breakdown voltage (BV CBO) | 30 V |
| Collector‑Emitter breakdown voltage (BV CEO) | 30 V |
| DC current gain (hFE) typical range | 270‑680 |
All ROHM 2SD2657 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑emitter saturation voltage for the 2SD2657?
The maximum VCE(sat) is 350 mV when IC = 1 A and IB = 50 mA.
What is the typical DC current gain (hFE) range for this transistor?
The typical hFE ranges from 270 to 680.
What is the maximum collector current for the 2SD2657K?
The maximum collector current is 15 A.
What is the power dissipation rating of the 2SD2657K?
The device can dissipate up to 200 mW.