Key facts
- Brand
- ROHM
- Model
- RB706D-40
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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ROHM RB706F-40 / RB706D-40 Schottky Barrier Diode Datasheet
Datasheet 2 pages · 25 KB · EN
This document provides technical specifications for the ROHM RB706F-40 and RB706D-40 Schottky barrier diodes. These are small surface-mounting dual element linear type diodes designed for general purpose detection and high speed switching applications. The datasheet details their construction as silicon epitaxial planar devices.
Read onlineROHM RB706D-40 specifications
| DC reverse voltage | 40 V |
|---|---|
| Peak forward surge current | 200 mA |
| Junction temperature | 125 °C |
| Storage temperature | -40~+125 °C |
| Forward voltage | 0.37 V |
| Capacitance between terminals | 2.0 pF |
Source: ROHM RB706F-40 / RB706D-40 Schottky Barrier Diode Datasheet
All ROHM RB706D-40 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the stated applications for the RB706F-40 / RB706D-40 diode?
The diode is intended for general purpose detection and high speed switching.
From: ROHM RB706F-40 / RB706D-40 Schottky Barrier Diode Datasheet
What is the maximum junction temperature for the RB706F-40 / RB706D-40?
The maximum junction temperature is 125 °C.
From: ROHM RB706F-40 / RB706D-40 Schottky Barrier Diode Datasheet