Key facts
- Brand
- ROHM
- Model
- TT8M1
- Category
- MOS transistor
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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ROHM TT8M1 Datasheet
The TT8M1 is a dual N‑channel and P‑channel MOSFET designed for low‑voltage (1.5 V) drive applications. It features low on‑resistance, a high‑power TSST8 package, and built‑in body diodes for both channels.
The document lists absolute maximum ratings, detailed electrical characteristics such as drain‑source voltage, gate‑source voltage, continuous drain current, capacitances, and switching times. It also includes typical application circuits, measurement setups, and legal notices.
ROHM TT8M1 specifications
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | ±10 V |
| Continuous drain current (ID) | 2.5 A |
| Power dissipation (PD) | 1.25 W total |
| Maximum channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Input capacitance (CISS) | 260 pF |
| Output capacitance (COSS) | 65 pF |
| Total gate charge (Qg) | 3.6 nC |
| Turn‑on delay time (t_on) | 9 ns |
Source: ROHM TT8M1 Datasheet
All ROHM TT8M1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the TT8M1?
The TT8M1 can withstand up to 20 V drain‑source voltage.
From: ROHM TT8M1 Datasheet
What gate‑drive voltage is required for the TT8M1?
The device is designed for a low‑voltage drive of 1.5 V.
From: ROHM TT8M1 Datasheet
What is the maximum drain‑source voltage rating?
The TT8M11 can withstand up to 30 V between drain and source.
From: ROHM TT8M11 Datasheet
What is the maximum gate‑source voltage rating?
The device is rated for a gate‑source voltage of ±20 V.
From: ROHM TT8M11 Datasheet