Key facts
- Brand
- ROHM
- Model
- 2SD1383K
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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ROHM 2SD1383K High-gain Amplifier Transistor Datasheet
This datasheet describes the ROHM 2SD1383K high‑gain amplifier transistor, a Darlington‑connected device with a built‑in 4 kΩ resistor between base and emitter. It lists key features, dimensions, packaging, absolute maximum ratings, and detailed electrical characteristics.
The document also includes characteristic curves for power dissipation, current gain, and capacitance, as well as a notice outlining usage restrictions, safety considerations, and export requirements for the product.
ROHM 2SD1383K specifications
| Collector‑base voltage (Vcbo) | 40 V |
|---|---|
| Collector‑emitter voltage (Vceo) | 32 V |
| Emitter‑base voltage (Vebo) | 6 V |
| Collector current (Ic) DC | 0.3 A |
| Power dissipation (P0) | 0.2 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Package type | SMT3 |
Source: ROHM 2SD1383K High-gain Amplifier Transistor Datasheet
All ROHM 2SD1383K documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑emitter voltage for the 2SD1383K?
The maximum collector‑emitter voltage is 32 V.
From: ROHM 2SD1383K High-gain Amplifier Transistor Datasheet
What package type does the 2SD1383K use?
It is supplied in an SMT3 surface‑mount package.
From: ROHM 2SD1383K High-gain Amplifier Transistor Datasheet
What is the collector‑base breakdown voltage of the transistors?
The collector‑base breakdown voltage (VCBO) is 40 V.
What is the recommended operating temperature range?
The device is rated for operation from –55 °C to +150 °C.