Key facts
- Brand
- ROHM
- Model
- VT6T1
- Category
- Transistor
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-04
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ManualROHM VT6T12 Manual
ROHM VT6T1 specifications
| Emitter‑base voltage (VEB0) | -5 V |
|---|---|
| Collector current (Ic) | 200 mA |
| Power dissipation (P) | 150 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 to +150 °C |
| DC current gain (hFE) range | 120 – 560 |
Source: ROHM VT6T11 Datasheet
All ROHM VT6T1 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Other documents 1
Questions answered in these manuals
What is the maximum collector current for the VT6T11?
The maximum collector current is 200 mA.
From: ROHM VT6T11 Datasheet
What type of circuits is the VT6T11 suitable for?
It is suitable for current‑mirror circuits.
From: ROHM VT6T11 Datasheet
What is the maximum collector current for the VT6T1?
The maximum collector current is 200 mA.
From: ROHM VT6T1 Datasheet
What storage temperature range is recommended?
The device can be stored from –55 °C up to +150 °C.
From: ROHM VT6T1 Datasheet