Key facts
- Brand
- ROHM
- Model
- IMX1
- Category
- Other Electronics
- Documents
- 2
- Languages
- ZH
- Last added
- 2012-06-01
Start here
ROHM EMX1/UMX1N/IMX1 Bipolar Transistor Datasheet
The ROHM EMX1/UMX1N/IMX1 series are general‑purpose dual NPN silicon transistors offered in EMT, UMT and SMT packages. The document lists key features such as independent transistor elements, reduced mounting cost and area, and provides the equivalent circuit.
Detailed specifications cover absolute maximum ratings, external dimensions, electrical characteristics, and packaging information. An appendix notes usage restrictions for high‑reliability applications and export control considerations. This manual is written in Chinese.
ROHM IMX1 specifications
| Collector‑base voltage (V_CBO) | 60 V |
|---|---|
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range (Tstg) | -55 °C to +150 °C |
| Power dissipation per element (EMX1) | 120 mW |
| Power dissipation per element (IMX1) | 200 mW |
| Package code (EMX1) | EMT6 |
| Package code (UMX1N) | UMT6 |
| Package code (IMX1) | SMT6 |
All ROHM IMX1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑base voltage for the EMX1/UMX1N/IMX1 transistors?
The maximum collector‑base voltage is 60 V.
How much power can each EMX1 transistor dissipate?
Each EMX1 element may dissipate up to 120 mW.
What is the maximum collector current for the IMX17?
The maximum collector current is 500 mA.
Can the IMX17 be used in medical or safety‑critical devices?
It is not recommended; users should consult ROHM sales representatives before using it in such applications.