Key facts
- Brand
- ROHM
- Model
- EMT1
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN · ZH
- Last added
- 2012-06-01
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ROHM EMT18 / UMT18N / IMT18 Datasheet
The EMT18, UMT18N and IMT18 are general‑purpose dual PNP silicon transistors offered by ROHM. They feature two independent transistor elements in a single package, allowing mounting with EMT3, UMT3 or SMT3 automatic machines.
Key specifications include a collector‑base voltage of 15 V, collector‑emitter voltage of 12 V, emitter‑base voltage of –6 V, and a maximum collector current of 500 mA. The devices are supplied in EMT, UMT and SMT package styles conforming to JEDEC SOT‑457, EIAJ SC‑88 and SC‑74 dimensions.
ROHM EMT1 specifications
| Collector‑base voltage (Vcbo) | 15 V |
|---|---|
| Collector‑emitter voltage (Vceo) | 12 V |
| Emitter‑base voltage (Vebo) | -6 V |
| Maximum collector current (Ic) | 500 mA |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
All ROHM EMT1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current for the EMT18 series?
The maximum collector current is 500 mA.
What are the absolute maximum voltage ratings for the EMT18 transistors?
Collector‑base voltage 15 V, collector‑emitter voltage 12 V, and emitter‑base voltage -6 V.
How much power can each transistor element dissipate?
Each element may dissipate up to 120 mW (200 mW for the UMT/IMT versions).