EMF6 is a dual transistor package used for power management circuits. It features a power switching circuit and reduced mounting cost and area.
This document is a datasheet for the ROHM EMF6, a power management circuit featuring two transistors housed independently in a single EMT6 package. The device includes a 2SA2018 NPN transistor and a 2SK3019 MOSFET, designed to reduce mounting costs and area by half compared to separate packages.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical characteristic curves for both transistors. Key specifications include a collector-emitter voltage of 12V for the NPN transistor and a drain-source voltage of 30V for the MOSFET, with a total power dissipation limit of 150mW.
| Package Type | EMT6 |
|---|---|
| Marking Code | F6 |
| Basic ordering unit | 8000 pieces |
| Collector-emitter voltage (2SA2018) | 12 V |
| Collector current (2SA2018) | 500 mA |
| Power dissipation (Total) | 150 mW |
| Drain-source voltage (2SK3019) | 30 V |
| Drain current (Continuous) (2SK3019) | 100 mA |
| Junction temperature | 150 °C |
The maximum total power dissipation is 150 mW.
The maximum collector-emitter voltage is 12 V.
The maximum continuous drain current is 100 mA.