Key facts
- Brand
- ROHM
- Model
- TT8K1
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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ROHM TT8K1 N‑Channel MOSFET Datasheet
The ROHM TT8K1 is a 1.5 V‑drive N‑channel MOSFET designed for low on‑resistance and high‑power packaging. The datasheet provides absolute maximum ratings, electrical characteristics, thermal resistance and typical performance curves.
Key sections cover features, packaging specifications, absolute maximum ratings, thermal resistance, detailed electrical characteristics, characteristic curves, measurement circuits and legal notices. The document also includes recommended application guidelines and safety notes for designers.
ROHM TT8K1 specifications
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 420 V |
| Continuous drain current (ID) | 3 A |
| Power dissipation (PD) | 1.25 W total |
| Maximum channel temperature (TCH) | 150 °C |
| Gate threshold voltage (Vth) | 1.0 V |
| Package type | TSST8 surface‑mount |
Source: ROHM TT8K11 Datasheet
All ROHM TT8K1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the TT8K11?
The TT8K11 can withstand up to 30 V drain‑source voltage.
From: ROHM TT8K11 Datasheet
What continuous drain current rating does the TT8K11 have?
It is rated for a continuous drain current of 3 A.
From: ROHM TT8K11 Datasheet