Key facts
- Brand
- ROHM
- Model
- TT8J2
- Category
- Other Electronics
- Documents
- 2
- Languages
- ZH
- Last added
- 2012-06-01
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ROHM TT8J2 P‑channel MOSFET Data Sheet
Datasheet 6 pages · 212 KB · ZH
This data sheet describes the ROHM TT8J2 P‑channel MOSFET, a low‑on‑resistance, high‑power device designed for 4 V drive applications. It includes structure, dimensions, features, and typical application circuits.
Key sections cover absolute maximum ratings, thermal resistance, detailed electrical characteristics, characteristic curves, and measurement circuit diagrams. The document ends with legal notices and contact information for ROHM support. This manual is written in Chinese.
ROHM TT8J2 specifications
| Drain‑source voltage (VDS) | -10 V |
|---|---|
| Gate‑source voltage (VGS) rating | -30 V |
| Thermal resistance, junction‑to‑ambient | 100 °C/W |
All ROHM TT8J2 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the TT8J2?
The device is rated for a drain‑source voltage of –10 V.
What is the maximum drain‑source breakdown voltage of the TT8J21?
The maximum drain‑source voltage is -10 V.