Key facts
- Brand
- ROHM
- Model
- US6M1
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-04
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ROHM US6M11 Dual MOSFET Datasheet
The US6M11 is a dual MOSFET that combines an N‑channel and a P‑channel device in a single TUMT6 package. It is designed for low‑voltage (1.5 V) drive applications and includes a built‑in G‑S protection diode.
Key features include low on‑resistance, high current capability, and detailed electrical characteristics such as drain‑source voltage ratings, gate‑source limits, and thermal parameters. The datasheet also provides typical output curves, switching time measurements, and recommended application circuits.
ROHM US6M1 specifications
| Drain‑source voltage (VDS) | 20 V (N‑channel), 12 V (P‑channel) |
|---|---|
| Gate‑source voltage (VGS) | ±10 V |
| Power dissipation (PD) | 10 W total |
| Thermal resistance (RθJA) | 125 °C/W total |
All ROHM US6M1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the US6M11?
The N‑channel MOSFET is rated for 20 V and the P‑channel MOSFET for 12 V drain‑source voltage.
What drive voltage does the US6M11 require?
It is a 1.5 V drive MOSFET, meaning it can be fully turned on with a gate voltage of about 1.5 V.
What is the maximum gate‑source voltage rating?
The device is rated for a maximum gate‑source voltage of 20 V.
What is the thermal resistance of the US6M1?
The junction‑to‑ambient thermal resistance is 125 °C/W.