The EMF6 dual transistor circuit is a power switching circuit that integrates the 2SA2018 and 2SK3019 transistors in a single EMT6 package. The circuit has the following features: 1. The power switching circuit is integrated in a single package, saving space and cost on the printed circuit board. 2. The polarity and pins of the two transistors are symmetrically designed to reduce the design difficulty and cost of the printed circuit board. 3. The pin spacing is 0.5mm, which is suitable for surface mount technology and meets the requirements of high density integration.
The EMF6 combines two transistors (2SA2018 and 2SK3019) in a single EMT6 package for power‑management applications. The document lists application notes, packaging dimensions, and key electrical parameters.
Absolute maximum ratings, electrical characteristics, and characteristic curves are detailed, along with switching performance and typical application circuit examples. Legal and warranty notices conclude the sheet.
| Collector‑base voltage (VCBO) | -15 V |
|---|---|
| Collector‑emitter voltage (VCEO) | -12 V |
| Transition frequency (fT) | 260 MHz |
The EMF6 transistors are housed independently in an EMT6 package.