Key facts
- Brand
- ROHM
- Model
- QS8K2
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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ROHM QS8K21 MOSFET Datasheet
The QS8K21 is a low‑on‑resistance, 4 V‑drive N‑channel MOSFET offered in a high‑power TSMT8 package. It is intended for switching applications in general‑purpose electronic equipment such as audio‑visual, office, and communication devices.
The datasheet lists key specifications including a 45 V drain‑source rating, 4 A continuous drain current, 15 W power dissipation, and a storage temperature range of –55 °C to +150 °C. Application circuits, measurement methods, and packaging details are also provided.
ROHM QS8K2 specifications
| Drain‑source voltage (VDS) | 45 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 4 A |
| Pulsed drain current (ID,pulse) | 12 A |
| Power dissipation | 15 W |
| Thermal resistance (RθJA) | 83.3 °C/W |
| Storage temperature range | -55 °C to +150 °C |
| Package type | TSMT8 |
Source: ROHM QS8K21 MOSFET Datasheet
All ROHM QS8K2 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the QS8K21?
The QS8K21 can withstand up to 45 V drain‑source voltage.
What is the continuous drain current rating of the QS8K21?
It is rated for a continuous drain current of 4 A.
What is the maximum drain‑source voltage rating?
The QS8K2 can withstand up to 30 V between drain and source.
From: ROHM QS8K2 Datasheet
What is the continuous drain current rating?
The device is rated for a continuous drain current of 13.5 A.
From: ROHM QS8K2 Datasheet