Key facts
- Brand
- ROHM
- Model
- US5U3
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-04
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Rohm US5U3 N‑Channel MOSFET & Schottky Diode Datasheet
The US5U3 is an N‑channel MOSFET combined with a Schottky barrier diode in a TUMTS5 package, offering high‑speed switching, low on‑resistance, and low‑voltage drive capability. It is intended for switching applications where a built‑in diode is advantageous.
Key specifications include a 30 V drain‑source rating, 5 A continuous drain current, low gate threshold (0.5‑1.5 V), and typical on‑resistance around 180 mΩ. The device is supplied on a ceramic board and includes detailed electrical characteristics and characteristic curves for design reference.
ROHM US5U3 specifications
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 12 V |
| Continuous drain current (ID) | 5 A |
| Power dissipation per element | 0.207 W |
| Gate threshold voltage (VGS(th)) | 0.5 – 1.5 V |
Source: Rohm US5U3 N‑Channel MOSFET & Schottky Diode Datasheet
All ROHM US5U3 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage of the US5U3?
The US5U3 can tolerate up to 30 V between drain and source.
From: Rohm US5U3 N‑Channel MOSFET & Schottky Diode Datasheet
What continuous drain current can the US5U3 handle?
It is rated for a continuous drain current of 5 A.
From: Rohm US5U3 N‑Channel MOSFET & Schottky Diode Datasheet
What is the maximum drain‑source voltage for the US5U38?
The maximum drain‑source voltage is –20 V.
From: ROHM US5U38 Datasheet
What forward voltage does the built‑in Schottky diode have?
The Schottky diode’s typical forward voltage is 0.49 V.
From: ROHM US5U38 Datasheet