Datasheet
This document describes the features and characteristics of a 204 TM March 1997 HM-65262/883 16K x 1 asynchronous CMOS static RAM, including fast access time, low standby current, low operating current, data retention, TTL compatible inputs and outputs, etc.
User Manual
This is a HM-6617/883 2K x 8 CMOS PROM datasheet
Datasheet
HM-6642/883 512 x 8 CMOS PROM is a 512 x 8 CMOS NiCr fusible link Programmable Read Only Memory produced by Intersil, which has synchronous circuit design techniques and CMOS processing techniques, and has high speed performance and very low power consumption.
Datasheet
The HM-6617/883 2K x 8 CMOS PROM is a low power synchronous design, using Intersil's advanced self-aligned silicon gate CMOS process technology, offering ultra-low standby current.
Datasheet
This document describes a CMOS 8192 x 8-bit Static Random Access Memory with features such as low standby supply current, fast address access time, and low data retention supply voltage. It is suitable for microprocessor-based systems and is easy to interface with Intersil 80C86 and 80C88 microprocessors.
Datasheet
The document introduces the HM-6551/883, which is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. It features high performance and low power operation, and provides on chip latches for address and data outputs, allowing efficient interfacing with microprocessor systems.
User Manual
The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use.
User Manual
The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology by HMC. The device utilizes synchronous circuitry to achieve high performance and low power operation.
