The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology by HMC. The device utilizes synchronous circuitry to achieve high performance and low power operation.
The HM-6514/883 is a 1024 × 4 static CMOS RAM fabricated with self‑aligned silicon‑gate technology. It offers low‑power standby operation (125 µW max) and TTL‑compatible I/O with gated inputs and three‑state outputs, eliminating the need for external pull‑up or pull‑down resistors.
The document lists absolute maximum ratings, operating conditions, detailed DC and AC electrical performance specifications, pin descriptions, functional diagrams, timing waveforms for read and write cycles, and test circuitry. It also includes die dimensions, metallization details, and conformance information.
| Memory size | 1024 × 4 bits |
|---|---|
| Low‑power standby current | 125 µW max |
| Access time | 120 ns (typ) / 200 ns (max) |
| Supply voltage range | +4.5 V to +5.5 V |
| Operating temperature range | -55 °C to +125 °C |
| Input capacitance | 8 pF |
The device can operate up to +125 °C.
Standby power consumption is up to 125 µW.
The access time is specified as 120 ns typical and 200 ns maximum.
The HM-6514/883 operates from +4.5 V to +5.5 V.