STMicroelectronics STB1 Manuals

ManualLib has 6 documents for the STMicroelectronics STB1: 6 datasheets. Every file can be read online or downloaded as a PDF for free.

Datasheet 6

Key facts

Model
STB1
Industry
Industrial
Documents
6
Languages
EN
Last added
2012-08-07

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DatasheetST STP14NK60Z STP14NK60ZFP STB14NK60Z/-1 STW14NK60Z handbook

ST STP14NK60Z STP14NK60ZFP STB14NK60Z/-1 STW14NK60Z handbook

Datasheet

The document describes the features and characteristics of a series of SuperMESH™ MOSFET products, including a working voltage of 600V, RDS(on) of 0.45Ω, high dv/dt capability, and 100% avalanche tested. These products are suitable for high current, high-speed switching applications, especially for offline power supplies, adapters, and power factor correction.

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STMicroelectronics STB1 specifications

Maximum Drain‑Source Voltage (VDS)500 V
Gate‑Source Zener Breakdown Voltage (VZ)30 V
Avalanche Current (IAval)4.4 A
Input Capacitance (Ciss)535 pF
Available PackagesDPAK, IPAK, TO‑220, TO‑220FP

Source: STMicroelectronics STB5NK50Z / STD5NK50Z / STP5NK50Z / STP5NK50ZFP Datasheet

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Questions answered in these manuals

What is the maximum drain‑source voltage for these MOSFETs?

The devices are rated for a maximum drain‑source voltage of 500 V.

From: STMicroelectronics STB5NK50Z / STD5NK50Z / STP5NK50Z / STP5NK50ZFP Datasheet

Which package types are offered for the STB5NK50Z series?

The series is available in DPAK, IPAK, TO‑220 and TO‑220FP packages.

From: STMicroelectronics STB5NK50Z / STD5NK50Z / STP5NK50Z / STP5NK50ZFP Datasheet

What is the maximum drain‑source voltage for these MOSFETs?

The devices are rated for a maximum drain‑source voltage of 600 V.

From: STMICROELECTRONICS STP10NK60Z/FP STB10NK60Z/-1 STW10NK60Z handbook

What is the typical on‑resistance of the STP10NK60Z series?

The typical on‑resistance is 0.65 mΩ.

From: STMICROELECTRONICS STP10NK60Z/FP STB10NK60Z/-1 STW10NK60Z handbook