Key facts
- Brand
- STMicroelectronics
- Model
- STB1
- Industry
- Industrial
- Documents
- 6
- Languages
- EN
- Last added
- 2012-08-07
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ST STP14NK60Z STP14NK60ZFP STB14NK60Z/-1 STW14NK60Z handbook
This document describes the STP14NK60Z family of N-channel 600V SuperMESH™ MOSFETs. The series features an optimized strip-based PowerMESH layout designed to significantly reduce on-resistance while ensuring high dv/dt capability for demanding applications.
The devices are specifically engineered with built-in back-to-back Zener diodes to protect against gate-source voltage transients and enhance ESD immunity, eliminating the need for external components. They are suitable for high-current, high-speed switching in off-line power supplies, adapters, PFC circuits, and lighting applications.
STMicroelectronics STB1 specifications
| Continuous Drain Current at Tc = 25°C | 20 A |
|---|---|
| Static Drain-source On Resistance | Typ. 0.140 Q |
| Total Dissipation at Tc = 25°C | 160 W |
| Max. Operating Junction Temperature | 150 °C |
Source: ST STP25NM60N STF25NM60N STB25NM60N/-1 STW25NM60N handbook
All STMicroelectronics STB1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
- ST STP14NK60Z STP14NK60ZFP STB14NK60Z/-1 STW14NK60Z handbook 17 p
- STMicroelectronics STP10NK60Z/FP, STB10NK60Z/-1, STW10NK60Z Datasheet 14 p
- ST STP25NM60N STF25NM60N STB25NM60N/-1 STW25NM60N handbook 12 p
- ST STP25NM50N STF25NM50N STB25NM50N/-1 STW25NM50N handbook 16 p
- STMicroelectronics STB5NK50Z / STD5NK50Z / STP5NK50Z / STP5NK50ZFP Datasheet 17 p
- STMICROELECTRONICS STP10NK60Z/FP STB10NK60Z/-1 STW10NK60Z handbook 14 p
Questions answered in these manuals
What is the primary protection feature of this MOSFET series?
The devices include built-in back-to-back Zener diodes designed to protect against gate-source voltage transients and enhance ESD capability.
From: ST STP14NK60Z STP14NK60ZFP STB14NK60Z/-1 STW14NK60Z handbook
What packages are available for the STP14NK60Z series?
The series is available in TO-220, TO-220FP (TO-220FP), D2PAK, and TO-247 packages.
From: ST STP14NK60Z STP14NK60ZFP STB14NK60Z/-1 STW14NK60Z handbook
What technology is used in these MOSFETs?
The devices are realized with the second generation of MDmesh Technology.
From: ST STP25NM60N STF25NM60N STB25NM60N/-1 STW25NM60N handbook
What is the typical on-resistance?
A typical Ron(on) is 0.140 Q.
From: ST STP25NM60N STF25NM60N STB25NM60N/-1 STW25NM60N handbook
What is the maximum continuous drain current for this MOSFET at a case temperature of 25°C?
The device supports a continuous drain current of 22 A when the case temperature is 25°C.
From: ST STP25NM50N STF25NM50N STB25NM50N/-1 STW25NM50N handbook
What are the maximum ratings for drain-source and gate-source voltage?
The maximum drain-source voltage is 500 V, and the maximum gate-source voltage is 425 V.
From: ST STP25NM50N STF25NM50N STB25NM50N/-1 STW25NM50N handbook