The document describes the features and characteristics of a series of SuperMESH™ MOSFET products, including a working voltage of 600V, RDS(on) of 0.45Ω, high dv/dt capability, and 100% avalanche tested. These products are suitable for high current, high-speed switching applications, especially for offline power supplies, adapters, and power factor correction.
This document describes the STP14NK60Z family of N-channel 600V SuperMESH™ MOSFETs. The series features an optimized strip-based PowerMESH layout designed to significantly reduce on-resistance while ensuring high dv/dt capability for demanding applications.
The devices are specifically engineered with built-in back-to-back Zener diodes to protect against gate-source voltage transients and enhance ESD immunity, eliminating the need for external components. They are suitable for high-current, high-speed switching in off-line power supplies, adapters, PFC circuits, and lighting applications.
| Continuous Drain Current (TO-220/D2PAK/PPAK) | 13.5 A |
|---|---|
| Total Dissipation (TO-220/D2PAK/PPAK) | 160 W |
The devices include built-in back-to-back Zener diodes designed to protect against gate-source voltage transients and enhance ESD capability.
The series is available in TO-220, TO-220FP (TO-220FP), D2PAK, and TO-247 packages.