The STP25NM60N is a second generation MDmesh™ MOSFET N-channel 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247. It has the world's lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
This document presents the STP25NM60N, STF25NM60N, STB25NM60N/-1, and STW25NM60N series of N-Channel 600V MOSFETs. These devices utilize second-generation MDmesh™ technology to achieve world-class low on-resistance and gate charge, making them suitable for high-efficiency converters.
| Continuous Drain Current at Tc = 25°C | 20 A |
|---|---|
| Static Drain-source On Resistance | Typ. 0.140 Q |
| Total Dissipation at Tc = 25°C | 160 W |
| Max. Operating Junction Temperature | 150 °C |
The devices are realized with the second generation of MDmesh Technology.
A typical Ron(on) is 0.140 Q.