Key facts
- Brand
- STMicroelectronics
- Model
- STB12NK80Z
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-08-07
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ST STB12NK80Z/STP12NK80Z/STW12NK80Z handbook(1)
The document describes the features and characteristics of ST's STB12NK80Z, STP12NK80Z, and STW12NK80Z N-channel 800V - 0.65Ω - 10.5A - TO220-D²PAK-TO247 Zener-Protected SuperMESH™ MOSFET. The products have extremely high dv/dt capability, improved ESD capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.
Read onlineSTMicroelectronics STB12NK80Z specifications
| Drain‑source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 10.5 A |
| Total Power Dissipation (PD) | 190 W |
Source: STMicroelectronics STP12NK80Z/STB12NK80Z/STW12NK80Z Handbook
All STMicroelectronics STB12NK80Z documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for these MOSFETs?
The devices are rated for a maximum drain‑source voltage of 800 V.
From: STMicroelectronics STP12NK80Z/STB12NK80Z/STW12NK80Z Handbook
What continuous drain current can the MOSFET handle at 25 °C?
Each MOSFET can conduct up to 10.5 A continuously at 25 °C.
From: STMicroelectronics STP12NK80Z/STB12NK80Z/STW12NK80Z Handbook