Key facts
- Brand
- STMicroelectronics
- Model
- STB16NK60Z-S
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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DatasheetST STP16NK60Z/STB16NK60Z-S/STW16NK60Z handbook
ST STP16NK60Z/STB16NK60Z-S/STW16NK60Z handbook
Datasheet
This document describes the features and characteristics of the STP16NK60Z, STB16NK60Z-S, and STW16NK60Z N-channel 600V SuperMESH MOSFET products, including extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.
Read onlineSTMicroelectronics STB16NK60Z-S specifications
| Drain‑source Voltage (Vds) | 600 V |
|---|---|
| Continuous Drain Current (Id) @ 25 °C | 14 A |
| Total Power Dissipation | 190 W |
| Typical On‑Resistance (Rds(on)) | 0.38 Ω |
| Avalanche Energy (Eas) | 360 mJ |
| Thermal Resistance Junction‑Ambient (RθJA) TO‑220 | 62.5 °C/W |
Source: STMicroelectronics STP16NK60Z / STB16NK60Z‑S / STW16NK60Z Datasheet
All STMicroelectronics STB16NK60Z-S documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current for these MOSFETs?
The maximum continuous drain current is 14 A at a case temperature of 25 °C.
From: STMicroelectronics STP16NK60Z / STB16NK60Z‑S / STW16NK60Z Datasheet
What is the typical on‑resistance of the MOSFETs?
The typical on‑resistance (Rds(on)) is 0.38 Ω.
From: STMicroelectronics STP16NK60Z / STB16NK60Z‑S / STW16NK60Z Datasheet