The STx25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
This document describes the STx25NM50N family of N-channel MOSFETs, which utilize the second generation of MDmesh Technology. These devices are designed to offer one of the world's lowest on-resistance and gate charge, making them suitable for high-efficiency converters and demanding high-voltage applications.
| Storage Temperature | -55 to 150 °C |
|---|
The device supports a continuous drain current of 22 A when the case temperature is 25°C.
The maximum drain-source voltage is 500 V, and the maximum gate-source voltage is 425 V.
The typical static drain-source on-resistance is 0.140 Ω at a gate-source voltage of 10 V.