STB10NK60Z is a 600V-0.65Ω-10A N-channel Zener-Protected SuperMESH™ Power MOSFET. It features a typical RDS(on) = 0.65 Ω, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge and very low intrinsic capacitances. It is ideal for high current, high speed switching applications such as off-line power supplies, adaptors and PFC.
This document provides technical specifications for the STP10NK60Z, STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, and STW10NK60Z N-Channel 600V Super MESH Power MOSFETs. These devices feature extremely high dv/dt capability and are designed for high current, high speed switching applications such as off-line power supplies, adapters, PFC, and lighting.