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- Brand
- STMicroelectronics
- Model
- STB10NK60Z
- Industry
- Industrial
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- 2
- Languages
- EN
- Last added
- 2012-08-07
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STMicroelectronics STP10NK60Z/FP, STB10NK60Z/-1, STW10NK60Z Datasheet
Datasheet 14 pages · 674 KB · EN
This document provides technical specifications for the STP10NK60Z, STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, and STW10NK60Z N-Channel 600V Super MESH Power MOSFETs. These devices feature extremely high dv/dt capability and are designed for high current, high speed switching applications such as off-line power supplies, adapters, PFC, and lighting.
Read onlineSTMicroelectronics STB10NK60Z specifications
| Drain‑source Voltage (VDS) | 600 V |
|---|---|
| Typical On‑Resistance (RDS(on)) | 0.65 mΩ |
| Avalanche Current (IA) | 9 A |
Source: STMICROELECTRONICS STP10NK60Z/FP STB10NK60Z/-1 STW10NK60Z handbook
All STMicroelectronics STB10NK60Z documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for these MOSFETs?
The devices are rated for a maximum drain‑source voltage of 600 V.
From: STMICROELECTRONICS STP10NK60Z/FP STB10NK60Z/-1 STW10NK60Z handbook
What is the typical on‑resistance of the STP10NK60Z series?
The typical on‑resistance is 0.65 mΩ.
From: STMICROELECTRONICS STP10NK60Z/FP STB10NK60Z/-1 STW10NK60Z handbook