Key facts
- Brand
- STMicroelectronics
- Model
- STB10NK60Z
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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DatasheetST STP10NK60Z/FP STB10NK60Z/-1 STW10NK60Z handbook
ST STP10NK60Z/FP STB10NK60Z/-1 STW10NK60Z handbook
Datasheet
STB10NK60Z is a 600V-0.65Ω-10A N-channel Zener-Protected SuperMESH™ Power MOSFET. It features a typical RDS(on) = 0.65 Ω, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge and very low intrinsic capacitances. It is ideal for high current, high speed switching applications such as off-line power supplies, adaptors and PFC.
Read onlineSTMicroelectronics STB10NK60Z specifications
| Drain‑source Voltage (VDS) | 600 V |
|---|---|
| Typical On‑Resistance (RDS(on)) | 0.65 mΩ |
| Avalanche Current (IA) | 9 A |
Source: STMICROELECTRONICS STP10NK60Z/FP STB10NK60Z/-1 STW10NK60Z handbook
All STMicroelectronics STB10NK60Z documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for these MOSFETs?
The devices are rated for a maximum drain‑source voltage of 600 V.
From: STMICROELECTRONICS STP10NK60Z/FP STB10NK60Z/-1 STW10NK60Z handbook
What is the typical on‑resistance of the STP10NK60Z series?
The typical on‑resistance is 0.65 mΩ.
From: STMICROELECTRONICS STP10NK60Z/FP STB10NK60Z/-1 STW10NK60Z handbook