Key facts
- Brand
- Siemens
- Model
- 514256BL
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-07
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SIEMENS HYB 514256B/BJ-50/-60/-70 256 K × 4-Bit Dynamic RAM HYB 514256BL/BJL-50/-60/-70 Low Power 256 K × 4-Bit Dynamic RAM(1)
The Siemens HYB 514256B/BJ/BL/BJL is a new generation dynamic RAM organized as 262,144 words by 4-bit. It utilizes CMOS silicon gate process technology to provide wide operating margins and high system bit densities. The device supports single +5 V power supply operation and features fast access times ranging from 50 ns to 70 ns depending on the version.
Read onlineSiemens 514256BL specifications
| Organization | 262 144 words by 4-bit |
|---|---|
| Supply Voltage | +5 V (+ 10%) |
| Access Time (-50 version) | 50 ns |
| Cycle Time (-50 version) | 95 ns |
All Siemens 514256BL documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
Is this memory suitable for battery backup applications?
Yes, the HYB 514256BL/BJL versions are specially selected for battery backup applications.
How much power does the -50 version consume during standby?
The maximum standby power dissipation is 5.5 mW for standard versions and 1.1 mW for L-versions.
What is the refresh cycle time for this DRAM?
The device supports a refresh period of 8 ms or 64 ms depending on the configuration.
Is this memory suitable for battery backup applications?
Yes, the HYB 514256BL/BJL variants are specially selected for battery backup applications.