RB706F-40 / RB706D-40 Schottky barrier diodes are small surface mounting dual element linear diodes produced by ROHM. They have low VF and low IR, and can be used for detection and high frequency switching applications.
This document provides technical specifications for the ROHM RB706F-40 and RB706D-40 Schottky barrier diodes. These are small surface-mounting dual element linear type diodes designed for general purpose detection and high speed switching applications. The datasheet details their construction as silicon epitaxial planar devices.
| DC reverse voltage | 40 V |
|---|---|
| Peak forward surge current | 200 mA |
| Junction temperature | 125 °C |
| Storage temperature | -40~+125 °C |
| Forward voltage | 0.37 V |
| Capacitance between terminals | 2.0 pF |
The diode is intended for general purpose detection and high speed switching.
The maximum junction temperature is 125 °C.
The maximum DC reverse voltage rating is 40 V.